Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
Reverse graded SiGe/Ge/Si buffers for high-composition virtual substrates
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DOI：
10.1063/1.3311556
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发表时间：
2010-03-15
影响因子：
3.2
通讯作者：
Leadley, D. R.
中科院分区：
文献类型：
--
作者：
Shah, V. A.;Dobbie, A.;Leadley, D. R.
研究了成分梯度对通过减压化学气相沉积生长的反向线性梯度硅锗虚拟衬底的影响。对于总厚度为 2.4 μm 的 Si(001)/Ge/RLG/Si(0.22)Ge(0.78) 缓冲层，顶部、完全松弛的 Si(0.22)Ge(0.78) 层内的穿透位错密度 (TDD) 为 4x10(6) cm(-2)，表面粗糙度为 3 nm。对于较厚的缓冲液，分级率降低，可以实现 3x10(6) cm(-2) 的较低 TDD 和 2 nm 的表面粗糙度。反梯度Si(0.22)Ge(0.78)虚拟衬底的特性与传统缓冲技术相当，甚至超过传统缓冲技术，从而产生更薄的高质量高Ge成分SiGe虚拟衬底。
The effect of compositional grading rate on reverse linear graded silicon germanium virtual substrates, grown by reduced pressure chemical vapor deposition, is investigated. For a Si(001)/Ge/RLG/Si(0.22)Ge(0.78) buffer of 2.4 mu m total thickness the threading dislocation density (TDD) within the top, fully relaxed, Si(0.22)Ge(0.78) layer is 4x10(6) cm(-2), with a surface roughness of 3 nm. For a thicker buffer, where the grading rate is reduced, a lower TDD of 3x10(6) cm(-2) and a surface roughness of 2 nm can be achieved. The characteristics of reverse graded Si(0.22)Ge(0.78) virtual substrates are shown to be comparable to, or exceed, conventional buffer techniques, leading to thinner high-quality high Ge composition SiGe virtual substrates.