Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices
Interface state‐induced shift of the oxide and semiconductor core levels for metal–oxide–semiconductor devices
复制标题
金属-氧化物-半导体器件中氧化物和半导体核心能级的界面态诱导变化
DOI：
10.1063/1.362954
复制
发表时间：
1996
影响因子：
3.2
通讯作者：
Y. Nishioka
中科院分区：
文献类型：
--
作者：
H. Kobayashi;Kenji Namba;Y. Yamashita;Y. Nakato;T. Komeda;Y. Nishioka
在Pt层和Si衬底之间的偏置下，对~ 3 nm厚的Pt/ ~ 3.6 nm厚的氧化硅/n - Si（100）器件进行了x射线光电子能谱测量。观察到，在施加偏置时，氧化物si2p峰以及衬底峰都发生了移位。这些变化是由偏置引起的氧化层电位下降的变化引起的，这是由于界面态电荷量的变化引起的。氧化物si2p峰的位移量与衬底si2p3 /2峰的位移量有很好的相关性。通过分析测量到的衬底Si 2p3/2峰位移量随偏置电压的变化，得到了界面态的能量分布。界面态谱在中隙附近有一个峰，该峰归因于孤立的Si悬空键态。
Measurements of x‐ray photoelectron spectra are performed for ∼3‐nm‐thick Pt/∼3.6‐nm‐thick silicon oxide/n‐Si(100) devices under biases between the Pt layer and the Si substrate. It is observed that the oxide Si 2p peak as well as the substrate peaks is shifted upon applying biases. These shifts are caused by a bias‐induced change of the potential drop across the oxide layer due to the change in the amount of the interface state charge. The amount of the shift of the oxide Si 2p peak is well correlated to that of the substrate Si 2p3/2 peak. The energy distribution of the interface states is obtained by analyzing the amount of the shift of the substrate Si 2p3/2 peak measured as a function of the bias voltage. The interface state spectrum has one peak near the midgap, and the peak is attributed to isolated Si dangling bond states.