Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga
Spectral shape analysis of ultraviolet luminescence in n-type ZnO:Ga
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DOI：
10.1063/1.2127167
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发表时间：
2005-10
影响因子：
3.2
通讯作者：
T. Makino;Y. Segawa;S. Yoshida;A. Tsukazaki;A. Ohtomo;M. Kawasaki;H. Koinuma
中科院分区：
文献类型：
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作者：
T. Makino;Y. Segawa;S. Yoshida;A. Tsukazaki;A. Ohtomo;M. Kawasaki;H. Koinuma
研究了激光分子束外延生长的n型Ga掺杂ZnO薄膜的光学性质。在近带边（NBE）区域观察到强烈的室温光致发光（PL）。此外，它的PL带的加宽显着大于由施主杂质的随机分布所引起的潜在的波动方面建模的理论结果预测。此外，线条形状相当不对称。为了解释NBE带的这些特征，我们建立了一个电子振动模型，考虑了一系列声子副本的贡献。
Thin films of laser molecular-beam epitaxy grown n-type Ga-doped ZnO were investigated with respect to their optical properties. Intense room-temperature photoluminescence (PL) in the near-band edge (NBE) region was observed. Moreover, its broadening of PL band was significantly larger than predicted by theoretical results modeled in terms of potential fluctuations caused by the random distribution of donor impurities. In addition, the line shape was rather asymmetrical. To explain these features of the NBE bands, a vibronic model was developed accounting for contributions from a series of phonon replicas.