On the outermost d-subshell absorption spectra of Ge I and Sn I
On the outermost d-subshell absorption spectra of Ge I and Sn I
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Ge I 和 Sn I 最外层 d 亚壳层吸收光谱
DOI：
10.1098/rspa.1977.0157
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发表时间：
1977
期刊：
影响因子：
--
通讯作者：
M. Martin
中科院分区：
文献类型：
--
作者：
J. Connerade;M. Martin
本文研究了元素SnI和GeI的单电子激发通道猝灭现象，首次观测到SnI和GeI在320~1000？A之间的吸收光谱。离散结构归因于最外层d-亚壳层的单电子激发，通过与Hartree-Fock计算的比较，得到了上层组态的识别，原子结构是在近似的LS耦合下计算的。有证据表明，SnI的4d光谱受双电离阈值附近的影响。
The quenching of single electron excitation channels first reported in the outermost d-subshell spectra of In I and Ga I is investigated here for the elements Sn I and Ge I. The absorption spectra of Sn I and Ge I between 320 and 1000 ŧ have been observed for the first time. Discrete structure is attributed to the excitation of a single electron from the outermost d-subshell and identifications of the upper configurations are obtained by comparison with Hartree-Fock calculations, the atomic structure being computed in approximate LS coupling. There is evidence that the 4d spectrum of Sn I is affected by the proximity of the double ionization threshold.