Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
Engineering near-infrared single-photon emitters with optically active spins in ultrapure silicon carbide
复制标题
DOI：
10.1038/ncomms8578
复制
发表时间：
2015-07-01
影响因子：
16.6
通讯作者：
Astakhov, G. V.
中科院分区：
文献类型：
--
作者：
Fuchs, F.;Stender, B.;Astakhov, G. V.
碳化硅中与空缺相关的中心由于其吸引人的光学和自旋特性而引起越来越多的关注。这些原子级的缺陷可以用电子或中子辐照产生；然而，他们的精确工程还没有得到证实。在这里，硅空位是在核反应堆中产生的，它们的密度被控制在8个数量级以上，精确到单个空位水平。孤立的硅空位充当近红外光稳定单光子发射器，即使在室温下也能工作。空位自旋可以用光学检测磁共振技术来控制，我们确定了跃迁速率和吸收截面，描述了这些发射体的强度依赖光物理。在技术友好的材料中按需设计光学活性自旋是实现微波激射放大器的关键一步，需要高密度自旋合成器和基于单自旋的量子比特。
Vacancy-related centres in silicon carbide are attracting growing attention because of their appealing optical and spin properties. These atomic-scale defects can be created using electron or neutron irradiation; however, their precise engineering has not been demonstrated yet. Here, silicon vacancies are generated in a nuclear reactor and their density is controlled over eight orders of magnitude within an accuracy down to a single vacancy level. An isolated silicon vacancy serves as a near-infrared photostable single-photon emitter, operating even at room temperature. The vacancy spins can be manipulated using an optically detected magnetic resonance technique, and we determine the transition rates and absorption cross-section, describing the intensity-dependent photophysics of these emitters. The on-demand engineering of optically active spins in technologically friendly materials is a crucial step toward implementation of both maser amplifiers, requiring high-density spin ensembles, and qubits based on single spins.