Surface states at semiconductor‐liquid junction
Surface states at semiconductor‐liquid junction
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半导体-液体连接处的表面态
DOI：
10.1063/1.332321
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发表时间：
1983
影响因子：
3.2
通讯作者：
M. Sukigara
中科院分区：
文献类型：
--
作者：
Kenkichiro Kobayashi;Yoshihiro Aikawa;M. Sukigara
通过电容测量研究了n-TiO 2和水溶液的结处的表面状态。从表面态电容与电极电位的关系可知，态密度为8×1012 cm−2的表面态位于导带底以下0.5 eV。根据表面态电容的频率依赖性，得到了2.0×10−19 cm 2的电子俘获截面。TiO 2的UV照射对表面态电容的影响表明该表面态源自吸附物。
Surface states at a junction of n‐TiO2 and aqueous solution were studied by means of the capacitance measurement. It appeared that, from the relation between surface‐state capacitance and electrode potential, surface states with state density of 8×1012 cm−2 were located at 0.5 eV below the bottom of the conduction band. The electron capture cross section of 2.0×10−19 cm2 was obtained from the frequency dependence of surface‐state capacitance. The effect of the UV irradiation of TiO2 on the surface‐state capacitance suggested that this surface state originated from adsorbates.