Solution-gated graphene field effect transistor for TP53 DNA sensor with coplanar electrode array
Solution-gated graphene field effect transistor for TP53 DNA sensor with coplanar electrode array
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DOI：
10.1016/j.snb.2019.03.080
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发表时间：
2019-07-15
影响因子：
8.4
通讯作者：
Kim, Yong-Sang
中科院分区：
文献类型：
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作者：
Kim, Hyo Eun;Schuck, Ariadna;Kim, Yong-Sang
本研究提出了一种用于TP53 DNA传感器的溶液门控石墨烯场效应晶体管（GFET），该晶体管采用独特的共面电极阵列与微流控芯片集成。集成的微流体通道控制要交付的溶液的确切数量。将癌症相关基因TP53应用于石墨烯活性层，以监测溶液门控GFET的传感性能。固定探针DNA后，我们将不同浓度（10 μ M-1 nM）的目标DNA杂交到每个电极阵列上。所得检测值的限为1 nM。为了验证选择性，将非互补和单错配DNA分子注入微通道时，Dirac点位移值不显著。Dirac点的移位是由于石墨烯表面DNA的负电荷引起的掺杂效应引起的。当在阵列结构中的其他8对电极上重现测量结果时，传递曲线呈现相似的狄拉克点值，即约为+/- 1 mV，表明该装置的稳定性。开发的溶液门控GFET传感器提供可靠的电特性测量和使用大面积石墨烯平台进行癌症诊断的多路检测。
This study presents a solution-gated graphene field effect transistor (GFET) for a TP53 DNA sensor using a unique coplanar electrode array integrated with a microfluidic chip. The integrated microfluidic channel controls the exact amount of solution to be delivered. The cancer-related gene, TP53, was applied over the graphene active layers to monitor the sensing performance of the solution-gated GFET. After immobilization of the probe DNA, we hybridized the target DNA with different concentrations (10 mu M-1 nM) onto each electrode array. The limit of the detection value obtained herein was 1 nM. To validate the selectivity, when the noncomplementary and one-mismatched DNA molecules were injected into the microchannel, the Dirac point shift values were not significant. The shift of the Dirac point occurs owing to the doping effect caused by the negative charges of the DNA over the graphene surface. When the measurements were reproduced in eight other electrode pairs in the array structure, the transfer curves presented similar Dirac point values, i.e., approximately +/- 1 mV, indicating the stability of the device. The developed solution-gated GFET sensor provides a reliable measurement of the electrical characteristics and a multiplex detection for cancer diagnostics using a large area of the graphene platform.