Interface modification of a pentacene field-effect transistor with a submicron channel
Interface modification of a pentacene field-effect transistor with a submicron channel
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DOI：
10.1063/1.2348736
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发表时间：
2006-09
影响因子：
4
通讯作者：
K. Tsukagoshi;K. Shigeto;I. Yagi;Y. Aoyagi
中科院分区：
文献类型：
--
作者：
K. Tsukagoshi;K. Shigeto;I. Yagi;Y. Aoyagi
对具有亚微米沟道的并五苯场效应晶体管进行了有效的界面改性。并五苯通道与基底之间以及通道与金属电极之间的两个界面通过纳米级修饰而显著改变。在衬底界面处，形成了薄的聚对二甲苯膜，导致短沟道晶体管的更高的场效应迁移率。当将多层四氰基醌二甲烷引入到金属电极下方的并五苯膜中时，实现了场效应迁移率的进一步增加。
Effective interface modification of a pentacene field-effect transistor with a submicron channel is performed. The two interfaces between the pentacene channel and the substrate and between the channel and the metallic electrode are markedly changed by nanoscale modification. At the substrate interface, thin polyparaxylylene film was formed, resulting in higher field-effect mobility of the short-channel transistor. A further increase in the field-effect mobility is achieved when multiple layers of tetracyanoquinodimethane are introduced to the pentacene film beneath the metallic electrodes.