Controlled Synthesis of Large-Scale, Uniform, Vertically Standing Graphene for High-Performance Field Emitters
Controlled Synthesis of Large-Scale, Uniform, Vertically Standing Graphene for High-Performance Field Emitters
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DOI：
10.1002/adma.201203902
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发表时间：
2013-01-11
影响因子：
29.4
通讯作者：
Gao, Hong-Jun
中科院分区：
文献类型：
--
作者：
Jiang, Lili;Yang, Tianzhong;Gao, Hong-Jun
石墨烯是一种由sp2杂化碳原子组成的二维（2D）薄片，由于其出色的材料特性[1-3]和有前景的技术应用，近年来引起了极大的关注。[4-12]虽然已经广泛地研究了具有平放在衬底上的石墨烯片的器件，但是在衬底上涉及垂直站立的石墨烯（VSG）膜的替代配置一直缺乏，但是具有许多独特的潜在应用，例如超级电容器和生物传感器。[13由于在这种VSG器件中存在大量暴露的边缘平面，其也可以潜在地提供高密度的单独场发射位点，因此已经建议将VSG膜应用于高效场发射体。[15-17]然而，为了获得具有低开启场、低阈值场、高增强因子和良好稳定性的优异的基于VSG的场致发射体，需要解决一些主要挑战，包括可靠地制造具有高产率和与衬底的界面接触的精确工程的大规模均匀VSG膜。
Graphene, a two-dimensional (2D) sheet consisting of sp 2-hybridized carbon atoms, has attracted enormous attention during recent years because of its outstanding materials characteristics [1–3] and promising technological applications.[4–12] While devices with graphene sheets lying flat on substrates have been investigated extensively, the alternative configuration invovling vertically standing graphene (VSG) films on substrates has been lacking but possesses many unique potential applications, such as supercapacitors and biosensors.[13, 14] Because plenty of exposed edge planes exist in such VSG devices, which can also potentially provide a high density of individual field emission sites, application of VSG films towards high-efficiency field emitters has already been suggested.[15–17] However, a few major challenges need to be addressed in order to achieve excellent VSG-based field emitters possessing a low turn-on field, low threshold field, high enhancement factor, and good stability, including the reliable fabrication of large-scale uniform VSG films with high yield and precise engineering of interfacial contact with substrates.