Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation
Impact of high temperature and short period annealing on SnS films deposited by E-beam evaporation
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DOI：
10.1016/j.apsusc.2017.01.113
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发表时间：
2017-04-30
影响因子：
6.7
通讯作者：
Jeon, Chan-Wook
中科院分区：
文献类型：
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作者：
Gedi, Sreedevi;Reddy, Vasudeva Minnam Reddy;Jeon, Chan-Wook
采用室温电子束蒸发的方法在mo衬底上沉积了SnS薄膜。在860 K的恒定高温下，分别进行1 min、3 min和5 min的短时间退火。采用合适的表征工具研究了热处理时间对SnS薄膜物理性能的影响。XRD分析表明，薄膜沿（111）平面高度取向，具有正交晶型结构。沉积后的SnS薄膜表面形貌呈现出相同的叶片织构，退火后的SnS薄膜除了具有叶片状晶粒外，还具有较大的正交板状晶粒，这说明了高温短时间退火的重要性。透射电子显微镜证实，这些大的正交板具有单晶性质。结果表明，高温短周期退火处理促进薄膜向单晶度方向生长。(C) 2017 Elsevier B.V.版权所有
Thin films of SnS were deposited on Mo-substrate using electron beam evaporation at room temperature. As-deposited SnS films were annealed at a constant high temperaure of 860 K for different short period of times, 1 min, 3 min, and 5 min. The impact of heat treatment period on the physical properties of SnS films was investigated using appropriate characterization tools. XRD analysis revealed that the films were highly oriented along (111) plane with orthorhombic crystal structure. Surface morphology of as-deposited SnS films showed an identical leaf texture where as the annealed films showed large orthorombic slab shape grains in adidition to the leaf shape grains, which indicates the significance of short period annealing at high temperature. The transmission electron microscopy confirmed that those large orthorombic slabs had single-crystalline nature. The results emphasized that the short period annealing treatment at high temperature stimulated the growth of film towards the single crystallinity. (C) 2017 Elsevier B.V. All rights reserved.