Structural Characterization of Codeposition Growth β-FeSi2 Film
Structural Characterization of Codeposition Growth β-FeSi2 Film
复制标题
共沉积生长 β-FeSi2 薄膜的结构表征
DOI：
10.1143/jjap.37.622
复制
发表时间：
1998
影响因子：
1.5
通讯作者：
Liang Wang
中科院分区：
文献类型：
--
作者：
Chenglu Lin;Lianwei Wang;Xiangdong Chen;L. Chen;Liang Wang
在Si（111）衬底上，通过400°C下在β-FeSi 2模板上共沉积Fe和Si，然后在700°C下退火2 h，制备了β-FeSi 2外延薄膜。该模板是在Si（111）上用反应沉积外延法制备的。X射线衍射（XRD）谱图显示只有β-FeSi_2（202）或（220）峰，这与在Si（111）上外延的β-FeSi_2（101）或（110）相对应。截面透射电子显微镜（XTEM）和高分辨透射电子显微镜（HRTEM）观察表明，β-FeSi 2/Si界面在原子水平附近相当平坦。转换电子穆斯堡尔谱证明薄膜不是以多晶方式生长，而是以一个或多个外延等效取向生长。
Epitaxial β-FeSi2 film on Si(111) was prepared by codeposition of iron and silicon onto a β-FeSi2 template at 400°C and subsequent annealing at 700°C for 2 h. The template was prepared by reactive deposition epitaxy on Si(111). X-ray diffraction (XRD) pattern shows only β-FeSi2(202) or (220) peak which is in correspondence with the epitaxial β-FeSi2(101) or (110) on Si(111). Cross-sectional transmission electron microscopy (XTEM) and high resolution TEM (HRTEM) observation show that the β-FeSi2/Si interface was quite flat near atomic level. Conversion electron Msbauer spectrum proves that the film grows in one or more epitaxial equivalent orientations rather than in a polycrystalline manner.