Direct metal etch of ruthenium for advanced interconnect
Direct metal etch of ruthenium for advanced interconnect
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用于先进互连的钌直接金属蚀刻
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
Z. Tokei
中科院分区：
文献类型：
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作者：
S. Paolillo;D. Wan;F. Lazzarino;N. Rassoul;D. Piumi;Z. Tokei
在这项工作中，Ru线图案化直接蚀刻评估潜在的5纳米技术节点。在电感耦合等离子体刻蚀室中研究了偏压、总流量和Cl 2/（O2+ Cl 2）气体流量比对Ru刻蚀的影响。实现了具有90°锥角的Ru侧壁轮廓和Ru对SiO2硬掩模蚀刻选择性为6。作者展示了图案化纵横比高达3.5的线条和临界尺寸低至10.5 nm的线条（3σ线宽粗糙度为4.2 nm）的可行性，这为进一步扩展这种方法铺平了道路。最后，作者提出了一个Ru线粗糙度的研究后，图案化300毫米晶圆。在这里，他们比较线粗糙度的结果，其中Ru是沉积与不同的沉积技术，如原子层沉积和等离子体气相沉积，它是在各种温度下沉积后退火的晶圆，在这项工作中，Ru线图案通过直接蚀刻评估为潜在的5纳米技术节点。在电感耦合等离子体刻蚀室中研究了偏压、总流量和Cl 2/（O2+ Cl 2）气体流量比对Ru刻蚀的影响。实现了具有90°锥角的Ru侧壁轮廓和Ru对SiO2硬掩模蚀刻选择性为6。作者展示了图案化纵横比高达3.5的线条和临界尺寸低至10.5 nm的线条（3σ线宽粗糙度为4.2 nm）的可行性，这为进一步扩展这种方法铺平了道路。最后，作者提出了一个Ru线粗糙度的研究后，图案化300毫米晶圆。在这里，他们比较了用不同沉积技术沉积Ru的晶片的线粗糙度结果，例如原子层沉积和等离子体气相沉积，并且在各种温度下沉积后退火。
In this work, Ru wires patterning by direct etch are evaluated for a potential 5 nm technology node. The characteristics of Ru etching by varying the bias voltage, total flow rate and Cl2/(O2+Cl2) gas flow ratio are studied in an inductively couple plasma etching chamber. Ru sidewalls profile with a tapering angle of 90° and Ru to SiO2 hard mask etch selectivity of 6 are achieved. The authors show the feasibility of patterning lines with an aspect ratio up to 3.5 and lines with a critical dimension down to 10.5 nm (with a 3σ line width roughness of 4.2 nm), which paves the way to further scaling of this approach. Finally, the authors present a study on Ru line roughness after patterning on 300 mm wafers. Here, they compare line roughness results of wafers where Ru is deposited with different deposition techniques, such as atomic layer deposition and plasma vapor deposition, and it is annealed after deposition at various temperatures.In this work, Ru wires patterning by direct etch are evaluated for a potential 5 nm technology node. The characteristics of Ru etching by varying the bias voltage, total flow rate and Cl2/(O2+Cl2) gas flow ratio are studied in an inductively couple plasma etching chamber. Ru sidewalls profile with a tapering angle of 90° and Ru to SiO2 hard mask etch selectivity of 6 are achieved. The authors show the feasibility of patterning lines with an aspect ratio up to 3.5 and lines with a critical dimension down to 10.5 nm (with a 3σ line width roughness of 4.2 nm), which paves the way to further scaling of this approach. Finally, the authors present a study on Ru line roughness after patterning on 300 mm wafers. Here, they compare line roughness results of wafers where Ru is deposited with different deposition techniques, such as atomic layer deposition and plasma vapor deposition, and it is annealed after deposition at various temperatures.