Electrical properties and detection methods for CMOS IC defects
Electrical properties and detection methods for CMOS IC defects
复制标题
CMOS IC缺陷的电学特性及检测方法
DOI：
10.1109/etc.1989.36238
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发表时间：
1989
期刊：
影响因子：
--
通讯作者：
C. Hawkins
中科院分区：
文献类型：
--
作者：
J. Soden;C. Hawkins
综述了CMOS失效模式和机理，以及检测所需的测试矢量和参数测试要求。从物理角度讨论了CMOS卡开型故障，给出了具有这种故障模式的集成电路的故障分析结果。结果表明，在功能测试策略、固定测试策略、固定开放测试策略和I/SUB DDQ/测试策略中，没有一种单一的方法可以保证检测到所有类型的CMOS缺陷。I/SUB DDQ/测试是最敏感和全面的，但可能会忽略某些开路缺陷，并且是一种相对较慢的测量技术。测试向量法检测的CMOS缺陷较少，但可以以快速时钟速率运行，以检测I/SUB DDQ/TEST可能无法检测到的某些开路故障。最大的CMOSIC缺陷检测涉及I/SUB DDQ/测试和矢量刺激/响应测试的混合模式策略。
CMOS failure modes and mechanisms and the test vector and parametric test requirements for the detection are reviewed. The CMOS stuck-open fault is discussed from a physical viewpoint, with results given from failure analysis of ICs having this failure mode. The results show that among functional, stuck-at, stuck-open, and I/sub DDQ/ test strategies, no single method guarantees detection of all types of CMOS defects. The I/sub DDQ/ test is the most sensitive and comprehensive, but can miss certain open-circuit defects and is a relatively slow measurement technique. The test-vector approach detects fewer of the CMOS defects, but can run at fast clock rates to detect certain open-circuit faults that may not be detectable by the I/sub DDQ/ test. Maximal CMOS IC defect detection involves a mixed-mode strategy of I/sub DDQ/ tests and vector stimulus/response tests.<<ETX>>