Ultra-low dissipation patterned silicon nanowire arrays for scanning probe microscopy.
Ultra-low dissipation patterned silicon nanowire arrays for scanning probe microscopy.
复制标题
用于扫描探针显微镜的超低耗散图案化硅纳米线阵列。
DOI：
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
R. Budakian
中科院分区：
文献类型：
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作者：
Pardis Sahafi;William Rose;Andrew Jordan;B. Yager;M. Piscitelli;R. Budakian
近年来，自组装半导体纳米线已被成功地用作一些独特的扫描探针显微镜（SPM）设置中的超灵敏度杠杆。我们描述了超低耗散的图案化硅纳米线（SiNW）阵列的扫描探针应用优化的制造。我们的制造工艺能够生产出高成品率、超高纵横比的垂直SiNW，具有出色的力敏感性。最高灵敏度的硅纳米线在室温下具有9.7 ± 0.4 aN/kHz的热机械噪声限制力灵敏度，在4 K下为500 ± 20 zN/kHz。为了便于它们在SPM中的使用，SiNW被图案化在距离衬底边缘7 μm的范围内，从而允许方便的光学访问用于位移检测。
In recent years, self-assembled semiconductor nanowires have been successfully used as ultra-sensitive cantilevers in a number of unique scanning probe microscopy (SPM) settings. We describe the fabrication of ultra-low dissipation patterned silicon nanowire (SiNW) arrays optimized for scanning probe applications. Our fabrication process produces, with high yield, ultra-high aspect ratio vertical SiNWs that exhibit exceptional force sensitivity. The highest sensitivity SiNWs have thermomechanical-noise limited force sensitivity of 9.7 ± 0.4 aN/√Hz at room temperature and 500 ± 20 zN/√Hz at 4 K. To facilitate their use in SPM, the SiNWs are patterned within 7 μm from the edge of the substrate, allowing convenient optical access for displacement detection.