Operation Dynamics in Phase-Change Memory Cells and the Role of Access Devices
Operation Dynamics in Phase-Change Memory Cells and the Role of Access Devices
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相变存储单元的操作动态和存取器件的作用
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
H. Silva
中科院分区：
文献类型：
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作者：
A. Faraclas;N. Williams;F. Dirisaglik;K. Cil;A. Gokirmak;H. Silva
应用相变存储器元件中加热和非晶化分布的详细物理模型来说明负载和脉冲上升时间对相变存储器单元的重置操作的影响。电和热传输的有限元建模用于蘑菇形相变存储器元件-包括温度相关的材料参数、热电项和不同材料之间的热边界电阻-并且集成理想化电路模型用于接入设备（MOSFET和二极管，具有单独的串联电阻）。结果示出了对于特定的PCM单元和模拟的编程条件，导致成功复位操作而没有过多浪费功率的负载和瞬态时间的某些窗口。
A detailed physical model of the heating and amorphization profiles in phase-change memory elements is applied to illustrate the effects of loads and pulse rise times on the reset operation of phase-change memory cells. Finite element modeling of the electrical and thermal transport is used for a mushroom phase-change memory element -- including temperature dependent materials parameters, thermoelectric terms and thermal boundary resistance between different materials - and integrated idealized circuit models are used for the access devices (MOSFET and diode, with a separate series resistance). The results show certain windows of loads and transient times that lead to successful reset operation without excessive wasted power, for the particular PCM cells and programming conditions simulated.