Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas
Fundamental oscillation up to 915GHz in InGaAs/AlAs resonant tunneling diodes integrated with slot antennas
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DOI：
10.1109/icimw.2009.5324766
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发表时间：
2009-11
期刊：
影响因子：
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通讯作者：
M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama
中科院分区：
文献类型：
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作者：
M. Shiraishi;S. Suzuki;A. Teranishi;M. Asada;H. Sugiyama;H. Yokoyama
在室温下观察到InGaAs/AlAs共振隧穿二极管与平面缝隙天线集成的基频振荡，频率可达915 GHz。通过减小梅萨面积，减小了谐振隧穿二极管的寄生电容。目前的输出功率很小（大约几十nW），因为面积小（约0.63μm2）和可用电流密度低（约3 mA/μm2），这是峰谷之间的电流密度差。还示出了基振荡频率对梅萨面积的依赖关系。
A fundamental oscillation up to 915GHz was observed at room temperature in InGaAs/AlAs resonant tunneling diode integrated with planar slot antennas. By reducing the mesa area, parasitic capacitance of resonant tunneling diode was decreased. The output power was small (around a few tens nW) at present because of a small area (≈0.63μm2) and a low available current density (≈3mA/μm2) which is the difference in current density between the peak and valley. The dependence of fundamental oscillation frequency on mesa area is also shown.