Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
Spin torque switching of 20 nm magnetic tunnel junctions with perpendicular anisotropy
复制标题
DOI：
10.1063/1.3694270
复制
发表时间：
2012-03-26
影响因子：
4
通讯作者：
Worledge, D. C.
中科院分区：
文献类型：
--
作者：
Gajek, M.;Nowak, J. J.;Worledge, D. C.
自旋转移矩磁随机存取存储器（STT - MRAM）是最有前途的新兴非易失性存储技术之一。到目前为止，MRAM在单个芯片中已展示出密度、速度和非易失性的独特组合，然而，它还不具备取代任何一种主流存储器的能力。在本文中，我们展示了在采用垂直磁各向异性材料的直径为20纳米的磁性隧道结中自旋矩翻转的基本物理原理。这种深度缩小的能力清楚地表明，STT - MRAM器件本身可能适合以比先前已证实的更高的密度进行集成。（C）2012美国物理学会。[http://dx.doi.org/10.1063/1.3694270]
Spin-transfer torque magnetic random access memory (STT-MRAM) is one of the most promising emerging non-volatile memory technologies. MRAM has so far been demonstrated with a unique combination of density, speed, and non-volatility in a single chip, however, without the capability to replace any single mainstream memory. In this paper, we demonstrate the basic physics of spin torque switching in 20 nm diameter magnetic tunnel junctions with perpendicular magnetic anisotropy materials. This deep scaling capability clearly indicates the STT MRAM device itself may be suitable for integration at much higher densities than previously proven. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3694270]