OPTICAL STUDY OF INTERACTING DONORS IN SEMICONDUCTORS
OPTICAL STUDY OF INTERACTING DONORS IN SEMICONDUCTORS
复制标题
DOI：
10.1103/physrevb.23.5472
复制
发表时间：
1981-01-01
影响因子：
3.7
通讯作者：
RICE, TM
中科院分区：
文献类型：
--
作者：
THOMAS, GA;CAPIZZI, M;RICE, TM
本文详细测量了非补偿硅中磷施主的低温远红外吸收系数，并进行了理论分析。该研究涵盖了掺杂密度的3个数量级，即从孤立施主到3.7× 10 18 cm− 3的绝缘体-金属过渡附近。的光子能量从5%的孤立施主电离能（45.5毫电子伏）到约25%以上。光谱定量描述包括对状态（施主激子），电荷转移激发在低密度和能量，和激发过程中较大的随机集群在较高的密度。结果表明，施主形成了一个近乎理想的、随机的三维体系，其中存在大尺度的势涨落，支配着离域跃迁的发生。
Detailed measurements and theoretical analysis are presented of the far-infrared absorption coefficient of phosphorous donors in uncompensated silicon at low temperatures. The study covers over 3 orders of magnitude in doping density, ie, from the regime of isolated donors to near the insulator-metal transition at 3.7× 10 18 cm− 3. The photon energy was varied from 5% of the isolated donor ionization energy (45.5 meV) to about 25% above it. The spectra are described quantitatively by including pair states (donor excitons), charge-transfer excitations at low densities and energy, and excitation processes in larger random clusters at higher densities. The results indicate that the donors form a nearly ideal, random, three-dimensional system in which there are large-scale potential fluctuations which dominate the approach to the delocalization transition.