Effects of uniaxial and hydrostatic pressure on the valence band maximum inSb2Te3: An electronic structure study
Effects of uniaxial and hydrostatic pressure on the valence band maximum inSb2Te3: An electronic structure study
复制标题
DOI:
10.1103/physrevb.74.205113
复制
发表时间:
2006-11
影响因子:
3.7
通讯作者:
P. Larson
中科院分区:
文献类型:
--
作者:
P. Larson
, in the form of alloys withand, forms the basis of room temperature thermoelectric materials. While experimental pressure studies have investigated changes to thermoelectric properties, few theoretical investigations have examined how the band structure changes as a function of pressure. Electronic structure calculations have been performed onin order to understand the nature of the valence band maximum. We used lattice constants and atomic positions which have previously been relaxed under pressure in a work by another set of authors. Using these values we find significant changes to the valence band maximum as a function of pressure which the previous authors did not investigate. The valence band maximum lies off of the high symmetry lines which are usually plotted. Hydrostatic pressure shows very little change in the position of the valence band maximum up to, but a profound shift occurs when pressure is applied uniaxially. The valence band maximum shifts from one off-axis position to another by, so that aroundmultiple valence band maxima occur which may enhance the thermoelectric properties. The effective masses of this new peak are larger, consistent with the existence of a light-hole upper valence band (UVB) and a heavy-hole lower valence band (LVB). This electronic topological transition may explain the significant increase seen in the thermoelectric properties ofas a function of uniaxial pressure aroundby increasing both the band degeneracy and effective masses.