Pixel-level A / D conversion : comparison of two charge packets counting techniques
Pixel-level A / D conversion : comparison of two charge packets counting techniques
复制标题
像素级A/D转换：两种电荷包计数技术的比较
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
J.L. Martin
中科院分区：
文献类型：
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作者：
A. Peizerat;M. Arques;P. Villard;J.L. Martin
对CMOS图像传感器像素级ADC的两种实现技术进行了比较。由于电荷准确地表示照明量，因此这两种技术的原理都在于对来自检测器的小电荷包进行计数。基于0.13 μ mCMOS工艺，模拟结果和首次测试表明，LSB值可以降低到1900个电子，静态功率为250 nW/像素。目前，由于可用的技术，该技术仅限于中等尺寸的像素，即50 x50 μm或25 x25 μm，当填充因子接近100%时。
A comparison between two techniques for pixellevel ADC in CMOS image sensors is presented. As the charge represents accurately the amount of illumination, the principle of both techniques consists in counting small charge packets which come from the detector. Based on a 0.13 μm CMOS technology, simulation results and first measurements are presented showing that the LSB value can be reduced to 1900 electrons with a static power of 250nW per pixel. For the moment, due to the technology available, this technique is restricted to medium size pixels, i.e. 50x50 μm or 25x25 μm when the fill factor is close to 100%.