Properties and Degradation of Polarization Reversal of Soft BaTiO3 Ceramics for Ferroelectric Thin-Film Devices
Properties and Degradation of Polarization Reversal of Soft BaTiO3 Ceramics for Ferroelectric Thin-Film Devices
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铁电薄膜器件用软BaTiO3陶瓷的性能及极化反转的退化
DOI：
10.1143/jjap.38.5309
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发表时间：
1999
影响因子：
1.5
通讯作者：
K. Nagata
中科院分区：
文献类型：
--
作者：
Jirawat Thongrueng;T. Tsuchiya;Y. Masuda;S. Fujita;K. Nagata
通过用9 mol% Hf-Zr取代BaTiO 3的Ti位制备了具有65 V/mm的非常低矫顽场的软BaTiO 3陶瓷，用于铁电薄膜器件。测量了软BaTiO 3陶瓷的电学性能，并与普通BaTiO 3陶瓷的电学性能进行了比较。通过用Hf-Zr取代Ti位，可以控制相变温度，并在室温下从四方相、斜方相和菱方相中选择最佳的晶体结构。此外，采用溶胶-凝胶法制备了软质BaTiO 3薄膜，并对其进行了表征。
Soft BaTiO3 ceramics having a very low coercive field of 65 V/mm were prepared by substituting 9 mol% Hf–Zr for the Ti-site of BaTiO3, for applications to ferroelectric thin-film devices. Electrical properties of the soft BaTiO3 ceramics were measured and compared with those of normal BaTiO3 ceramics. By substituting Hf–Zr for Ti-site, the phase transition temperatures were controlled, and we could select the preferred crystal structure from the tetragonal, orthorhombic and rhombohedral phases at room temperature. In addition, the preparation and characterization of the soft BaTiO3 thin-films using a sol-gel process were carried out.