Performance improvement of Si(Li) Peltier cooled detectors
Performance improvement of Si(Li) Peltier cooled detectors
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硅（锂）帕尔贴冷却探测器的性能改进
DOI：
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发表时间：
2001
期刊：
影响因子：
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通讯作者：
V. A. Zalinkevich
中科院分区：
文献类型：
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作者：
A. Sokolov;V. Gostilo;A. Loupilov;V. A. Zalinkevich
通过改进电子性能，开发小型真空室和有效的5通道Peltier冷却器，获得了Si(Li) Peltier冷却探测器的光谱性能改进，在热负荷灵敏度小于15 mWt//spl°C的情况下，提供了132/spl°C的温差。它允许制造厚度为4-4.5 mm的圆形Si(Li) Peltier冷却探测器，敏感表面从12到100 mm/sup /。它们在5.9 keV上的能量分辨率根据敏感表面积的不同在158 ~ 240ev之间。这些探测器59.6 keV的能量分辨率在410 ~ 460 eV之间。厚度为4-4.5 mm、敏感面为60 mm/sup 2/的矩形探测器，能量分辨率分别为255和450 eV，能量分别为5.9和59.6 keV。
Spectrometric performance improvement of Si(Li) Peltier cooled detectors obtained by improvement of electronics performance, development of the small-sized vacuum chamber and effective 5-channel Peltier cooler, are providing temperature difference of 132/spl deg/C at sensitivity to heat loading less than 15 mWt//spl deg/C. It allows to fabricate circular Si(Li) Peltier cooled detectors with thickness of 4-4.5 mm and sensitive surface from 12 till 100 mm/sup 2/. Their energy resolution on energy 5.9 keV was from 158 till 2 40 eV depending on the sensitive surface area. And energy resolution on 59.6 keV for these detectors was from 410 till 460 eV. Rectangular detectors with thickness 4-4.5 mm and sensitive surface 60 mm/sup 2/ had energy resolution 255 and 450 eV on energies 5.9 and 59.6 keV correspondingly.