p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)
p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)
复制标题
DOI：
10.7567/apex.11.062301
复制
发表时间：
2018-06-01
影响因子：
2.3
通讯作者：
Suemasu, Takashi
中科院分区：
文献类型：
--
作者：
Deng, Tianguo;Sato, Takuma;Suemasu, Takashi
采用分子束外延技术在n-Si（001）上生长了空穴浓度为1.1 × 10 ~（18）cm ~（-3）的掺硼p-BaSi_2外延层，制备了p-BaSi_2/n-Si太阳电池。p-BaSi 2层的厚度（d）在20至60 nm之间变化，以研究其对太阳能电池性能的影响。在AM1.5光照下，转换效率随着d的增加而增加，在d = 40 nm处达到最大值9.8%，这几乎等于Si（111）上的p-BaSi 2/n-Si太阳能电池的最高效率（9.9%）。研究表明Si（001）衬底在BaSi 2太阳电池中具有良好的应用前景。(C)2018日本应用物理学会
B-doped p-BaSi2 epitaxial layers with a hole concentration of 1.1 x 10(18) cm(-3) were grown on n-Si(001) using molecular beam epitaxy to fabricate p-BaSi2/n-Si solar cells. The thickness (d) of the p-BaSi2 layer was varied from 20 to 60 nm to investigate its effect on the solar cell performance. The conversion efficiency under an AM1.5 illumination increased with d reaching a maximum of 9.8% at d = 40 nm, which is nearly equal to the highest efficiency (9.9%) for p-BaSi2/n-Si solar cells on Si(111). This study indicated that Si(001) substrates are promising for use in BaSi2 solar cells. (C) 2018 The Japan Society of Applied Physics