Metal direct nanoimprinting for photonics
Metal direct nanoimprinting for photonics
复制标题
DOI：
10.1016/j.mee.2007.08.001
复制
发表时间：
2008-02-01
影响因子：
2.3
通讯作者：
Loeffler, Jorg F.
中科院分区：
文献类型：
--
作者：
Buzzi, Stefano;Robin, Franck;Loeffler, Jorg F.
在本文中，金属直接纳米压印（压花）的金属微零件的生产进行了讨论，主要集中在其适用于制造含金属的光学器件，如光子晶体，等离子体激元波导或手性结构。选择银和金，因为它们在近红外和可见光范围内具有最低的光吸收。它们还由于其良好的延展性而易于成形，这可以通过在高温下加工来进一步增强。模具材料通常由硅构成，但其他电介质材料如氧化硅和氮化硅也成功地进行了测试。在硅晶片上蚀刻出横向尺寸低至250 nm、纵横比高达5的圆柱形和线形孔。所有的结构都成功地填充了银和金，并且填充更小的尺寸也被认为是可能的。因此，该技术适合于生产在红外线中工作的含金属的光学器件，至少低至1.5 μ m的标准电信波长，这需要200-300 nm的金属尺寸。(c)2007 Elsevier B. V.保留所有权利。
In this paper metal direct nanoimprinting (embossing) for the production of metallic microparts is discussed, with a main focus on its suitability for the fabrication of metal-containing optical devices such as photonic crystals, plasmon waveguides or chiral structures. Silver and gold were chosen, since they have the lowest light absorption in the near infrared and visible range. They are also easily formable due to their good ductility, which can be further enhanced by processing at elevated temperature. The mold material, which may form part of the optical device, usually consisted of silicon, but other dielectric materials such as silicon oxide and silicon nitride were also successfully tested.Cylindrical and line-shaped holes with lateral dimensions down to 250 nm and aspect ratios of up to 5 were etched in silicon wafers. All the structures were successfully filled with silver and gold, and the filling of smaller dimensions is also deemed possible. This technique is therefore suitable for producing metal-containing optical devices working in the infrared, at least down to the standard telecom wavelength of 1.5 mu m, which requires metallic dimensions of 200-300 nm. (c) 2007 Elsevier B.V. All rights reserved.