Influence of the Residual Impurities in Iron Sources on Q -FeSi_2 Layers Formed on Silicon (001) Substrates by a Vacuum Deposition Method

Influence of the Residual Impurities in Iron Sources on Q -FeSi_2 Layers Formed on Silicon (001) Substrates by a Vacuum Deposition Method
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铁源中残留杂质对真空沉积法在硅(001)基片上形成Q-FeSi_2层的影响

DOI：
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发表时间：
2006
期刊：
The 9th Meeting of Silicede Semiconductors and, the Related Compoound Vol. 9
影响因子：
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通讯作者：
T.Minami
T.Minami
中科院分区：
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文献类型：
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作者：
M.Ishii;S.Hanamura;T.Miyata;T.Minami

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