Electrical and interfacial characterization of atomic layer deposited high-κ gate dielectrics on GaAs for advanced CMOS devices
Electrical and interfacial characterization of atomic layer deposited high-κ gate dielectrics on GaAs for advanced CMOS devices
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DOI：
10.1109/ted.2007.901261
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发表时间：
2007-08-01
影响因子：
3.1
通讯作者：
Cho, Byung Jin
中科院分区：
文献类型：
--
作者：
Dalapati, Goutam Kumar;Tong, Yi;Cho, Byung Jin
本文研究了在硫钝化GaAs衬底上原子层淀积（ALD）Al_2O_3、HfO_2和HfAlO栅介质的MOS电容器的电学和界面特性。HfAlO在p型GaAs上的电性能上级Al（2）O（3）或HfO 2在GaAs上的电性能，这归因于界面层Ga-O形成的减少。在p型GaAs上的HfAlO在500 ℃的沉积后退火（PDA）后表现出最好的电学性能。发现PDA在高于500摄氏度下导致显著量的Ga和As向外扩散到高k介电质中，这使界面以及体高k特性劣化。
In this paper, electrical and interfacial properties of MOS capacitors with atomic layer deposited (ALD) Al2O3, HfO2, and HfAlO gate dielectrics on sulfur-passivated (S-passivated) GaAs substrates were investigated. HfAlO on p-type GaAs has shown superior electrical properties over AL(2)O(3) or HfO2 on GaAs, and it is attributed to the reduction of the Ga-O formation at the interfacial layer. HfAlO on p-type GaAs exhibits the best electrical properties after postdeposition annealing (PDA) at 500 degrees C. It is found that PDA, at above 500 degrees C, causes a significant amount of Ga and As out-diffusion into the high-kappa, dielectric, which degrades the interface, as well as bulk high-kappa properties.