Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method
Preparation of a stable silica membrane by a counter diffusion chemical vapor deposition method
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DOI：
10.1016/j.memsci.2004.11.008
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发表时间：
2005-04-01
影响因子：
9.5
通讯作者：
Nakao, SI
中科院分区：
文献类型：
--
作者：
Nomura, M;Ono, K;Nakao, SI
以正硅酸四甲酯（TMOS）和O-2为反应物，在873 K下用反向扩散化学气相沉积法制备了H2/N2渗透比大于1000的稳定SiO2膜。TMOS和O-2设置在衬底的相对几何形状中。并在基底孔中沉积二氧化硅层。通过二氧化硅膜的表观活化能随着沉积温度的增加而增加。H-2的活化能约为0.025。20 kJ mol（-1）。在873 K渗透测试下的H-2渗透率为1.5 × 10（-7）mol m（-2）s（-1）Pa-1。在典型的甲烷水蒸气重整条件下（76 kPa的水蒸气，773 K），H-2/N-2渗透比保持21 h。(c)2004 Elsevier B. V.保留所有权利。
A stable silica membrane having excellent H-2/N-2 permeance ratio (over 1000) was prepared by the counter diffusion chemical vapor deposition method using tetramethyl orthosilicate (TMOS) and O-2 as reactants at 873 K. TMOS and O-2 were provided in the opposing geometry of the Substrates. and silica layer was deposited in the substrate pores. Apparent activation energies through the silica membranes increased with increasing deposition temperatures. The activation energy of H-2 was ca. 20 kJ mol(-1) through the membrane. H-2 permeance at 873 K permeation test was 1.5 X 10(-7) mol m(-2) s(-1) Pa-1. H-2/N-2 permeance ratio was kept for 21 h under the typical steam-reforming conditions of methane for a membrane reactor (76 kPa of steam at 773 K). (c) 2004 Elsevier B.V. All rights reserved.