Effects of composition and thickness on the electrical properties of indium oxide/tin oxide multilayered films
Effects of composition and thickness on the electrical properties of indium oxide/tin oxide multilayered films
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成分和厚度对氧化铟/氧化锡多层薄膜电性能的影响
DOI：
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发表时间：
1989
期刊：
影响因子：
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通讯作者：
H. Oda
中科院分区：
文献类型：
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作者：
Takeyuki Suzuki;T. Yamazaki;H. Oda
通过离子束溅射法在低于100° C的温度下在玻璃基板上沉积具有2nm对厚度的氧化铟/氧化锡多层膜。的结构，电性能和可见光透过率作为一个功能的组成和总厚度上的沉积和退火的薄膜。X射线衍射分析表明，沉积的200 nm厚的薄膜（0.15 nm的氧化锡层）是部分结晶和薄膜薄于100 nm的非晶或微晶。当薄膜总厚度为100 nm时，薄膜的室温电阻率随氧化锡层平均厚度从0.05 nm增加到0.3 nm（理想单层厚度）而增加。我们观察到的霍尔迁移率的增加，从10到200 nm的总膜厚度在沉积样品含有0.15 nm的氧化锡层。
Indium oxide/tin oxide multilayered films with a 2 nm pair thickness were deposited on glass substrates at temperatures lower than 100° C by an ion-beam sputtering method. The structure, electrical properties and visible transmissivity were investigated as a function of composition and the total thickness on as-deposited and annealed films. X-ray diffraction analysis showed that the as-deposited 200 nm thick film (with 0.15 nm tin oxide layers) was partially crystalline and films thinner than 100 nm were amorphous or microcrystalline. The roomtemperature resistivity of as-prepared films increased with the increase of an average tin oxide layer thickness from ∼0.05 to ∼0.3 nm (ideal monolayer thickness) under a constant total thickness ∼100 nm. We observed a decrease of the Hall mobility with the increase of the total film thickness from 10 to 200 nm in as-deposited samples containing 0.15 nm tin oxide layers.