All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide
All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide
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DOI：
10.1103/physrevx.6.031014
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发表时间：
2016-07-28
影响因子：
12.5
通讯作者：
Astakhov, G. V.
中科院分区：
文献类型：
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作者：
Simin, D.;Soltamov, V. A.;Astakhov, G. V.
我们揭示了同位素纯化碳化硅（4H-(SiC)- si -28）中硅空位的精细结构，并揭示了自旋哈密顿量中尚未考虑的项，这些项源于自旋3/2色中心的三角锥体对称。这些项会产生额外的自旋跃迁，否则就会被禁止，并导致外磁场中的水平反交叉。我们观察到光致发光强度在这个水平的抗交叉附近有一个急剧的变化，这可以用于纯全光感应磁场。在室温下，我们在3 × 10(-7)mm(3)的体积内实现了优于100 nT/root Hz的直流磁场灵敏度，并证明了这种非接触式方法在高达至少500 K的高温下是稳健的。由于我们的方法不需要应用射频场，因此可以扩展到更大的体积。对于优化的3mm(3)的光捕获波导，投影噪声限制低于100 fT/根Hz。
We uncover the fine structure of a silicon vacancy in isotopically purified silicon carbide (4H-(SiC)-Si-28) and reveal not yet considered terms in the spin Hamiltonian, originated from the trigonal pyramidal symmetry of this spin-3/2 color center. These terms give rise to additional spin transitions, which would be otherwise forbidden, and lead to a level anticrossing in an external magnetic field. We observe a sharp variation of the photoluminescence intensity in the vicinity of this level anticrossing, which can be used for a purely all-optical sensing of the magnetic field. We achieve dc magnetic field sensitivity better than 100 nT/root Hz within a volume of 3 x 10(-7)mm(3) at room temperature and demonstrate that this contactless method is robust at high temperatures up to at least 500 K. As our approach does not require application of radio-frequency fields, it is scalable to much larger volumes. For an optimized light-trapping waveguide of 3 mm(3), the projection noise limit is below 100 fT/root Hz.