The role of heat transfer during reactive‐ion etching of polymer films
The role of heat transfer during reactive‐ion etching of polymer films
复制标题
聚合物薄膜反应离子蚀刻过程中传热的作用
DOI：
10.1116/1.584888
复制
发表时间：
1990
影响因子：
1.4
通讯作者：
F. Rodriguez
中科院分区：
文献类型：
--
作者：
B. C. Dems;F. Rodriguez
对有机聚合物薄膜的 O2 和 Ar 反应离子蚀刻 (RIE) 动力学进行了研究，并对基材传热进行了分析。辐射传热在确定 RIE 期间的基材温度分布方面发挥着重要作用。在 5 mTorr 的相对较低压力下（通常可实现各向异性蚀刻轮廓），辐射传热占离开基材的总能量（热）通量的近 85%。 RIE 处理时间（基板温度）极大地影响了断链聚合物（包括聚甲基丙烯酸甲酯和聚α-甲基苯乙烯）的 RIE 速率，而处理时间对交联聚合物的蚀刻速率完全没有影响。为了确认 RIE 期间辐射传热的作用，将硅晶片的底面涂成黑色，这增加了总辐射表面发射率，并降低了给定 RIE 条件下的稳态衬底温度。聚甲基丙烯酸甲酯的极限蚀刻速率...
A study of the kinetics of O2 and Ar reactive‐ion etching (RIE) of organic polymer films and an analysis of substrate heat transfer was carried out. Radiative heat transfer played a significant role in determining the substrate temperature profile during RIE. At the relatively low pressure of 5 mTorr, where anisotropic etch profiles are typically achieved, radiative heat transfer accounted for nearly 85% of the total energy (heat) flux away from the substrate. RIE processing time (substrate temperature) drastically affected the RIE rate of chain‐scissioning polymers, which included poly(methyl methacrylate) and poly(α‐methylstyrene), while processing time had absolutely no effect on etch rates of cross‐linking polymers. To confirm the role of radiative heat transfer during RIE, the underside of a silicon wafer was painted black, which increased the total radiative surface emittance and lowered the steady‐state substrate temperature for a given set of RIE conditions. Ultimate etch rates of poly(methyl meth...