Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire
Effects of Nano- and Microscale SiO2 Masks on the Growth of a-Plane GaN Layers on r-Plane Sapphire
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纳米和微米级 SiO2 掩模对 r 面蓝宝石上 a 面 GaN 层生长的影响
DOI：
10.7567/jjap.52.08jc04
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发表时间：
2013
影响因子：
1.5
通讯作者：
K. Baik
中科院分区：
文献类型：
--
作者：
J. Son;Cao Miao;Y. Honda;M. Yamaguchi;H. Amano;Y. Seo;S. Hwang;K. Baik
我们报告的综合效果的a-平面GaN层的纳米级图案化的绝缘体上的r-平面蓝宝石衬底和外延横向过生长（CARG）技术。使用纳米级和微米级SiO2掩模的完全结合的a-平面GaN层分别示出了掩模上的纳米级和微米级空隙的形成。原子力显微镜（AFM）测量显示表面粗糙度为0.63 nm，亚微米凹坑密度为0.7.8 ×107 cm-2。光致发光（PL）的强度增强了9.0倍，与平面样品相比。沿c轴和m轴的（112沿着）X射线摇摆曲线的Ω半高全宽（FWHM）值分别为553和788弧秒。一个平面图阴极发光（CL）映射图像显示高发光强度的二氧化硅掩模。
We report on the combined effects of a-plane GaN layers on a nanoscale patterned insulator on an r-plane sapphire substrate and epitaxial lateral overgrowth (ELOG) techniques. The fully coalescent a-plane GaN layer using nano- and microscale SiO2 masks showed the formation of nano- and microscale voids on the masks, respectively. Atomic force microscopy (AFM) measurements revealed a surface roughness of 0.63 nm and a submicron pit density of ∼7.8 ×107 cm-2. Photoluminescence (PL) intensity was enhanced by a factor of 9.0 in comparison with that of a planar sample. Omega full-width at half-maximum (FWHM) values of the (112̄0) X-ray rocking curve along the c- and m-axes were 553 and 788 arcsec, respectively. A plan-view cathodoluminescence (CL) mapping image showed high luminescence intensity on the SiO2 masks.
影响因子：
3.7
作者：
Bernardini, F;Fiorentini, V;Vanderbilt, D
通讯作者：
Vanderbilt, D