Ring Oscillator Based Test Structure for NBTI Analysis
Ring Oscillator Based Test Structure for NBTI Analysis
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用于 NBTI 分析的基于环形振荡器的测试结构
DOI：
10.1109/icmts.2007.374452
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
R. Bolam
中科院分区：
文献类型：
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作者：
M. Ketchen;M. Bhushan;R. Bolam
我们已经开发出一种新的NBTI测试结构，包括不同的电路类型的阶段的环形振荡器的差分对。对于由驱动p-FET传输门的反相器组成的级，其栅极被设置在可调节的DC电势，该结构允许响应于非常短以及传统的长持续时间纯NBTI AC或DC电压/温度应力的大量（~ 100）产品代表性p-FET的平均Vt偏移的高分辨率绝对测量。
We have developed a new NBTI test structure comprising differential pairs of ring oscillators with stages of various circuit types. For stages consisting of inverters driving p-FET passgates, the gates of which are set at an adjustable DC potential, this structure allows high resolution absolute measurement of the average Vt shift of a large number (~ 100) product representative p-FETs in response to very short as well as traditional long duration pure NBTI AC or DC voltage/temperature stresses.