Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: A study by high-resolution Rutherford backscattering
Subsurface enrichment of Co in Si (100) at initial stages of growth at room temperature: A study by high-resolution Rutherford backscattering
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DOI：
10.1063/1.2717525
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发表时间：
2007-03
影响因子：
4
通讯作者：
S. Dash;D. Goll;H. Carstanjen
中科院分区：
文献类型：
--
作者：
S. Dash;D. Goll;H. Carstanjen
本文用高分辨卢瑟福背散射光谱原位研究了室温下Co在Si（100）上生长初期的Co分布。即使在非常低的覆盖率（0.08 ML）下，也发现了Co的内扩散，内扩散的Co形成了一个明显的次表面最大值，随着覆盖率的增加，该最大值向Si体中移动，并持续到1.19 ML的覆盖率。在表面处的Co浓度在0.5的值处饱和，对于1.19 ML的Co。对于2和2.93 ML，可以看到Si向外扩散的证据，这导致CoSi相的形成。
The Co distribution in the initial stages of growth of Co on Si (100) at room temperature has been probed in situ by high-resolution Rutherford backscattering spectrometry. Even at very low coverage (0.08 ML) extensive Co in-diffusion is found. The in-diffused Co forms a pronounced subsurface maximum which shifts into the Si bulk with increasing coverage and persists up to a coverage of 1.19 ML. The Co concentration at the surface saturates at the value of 0.5 for 1.19 ML of Co. Evidence of Si out-diffusion is seen for 2 and 2.93 ML which results in the formation of a CoSi phase.