High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate
High brightness InGaN-based yellow light-emitting diodes with strain modulation layers grown on Si substrate
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在 Si 衬底上生长应变调制层的高亮度 InGaN 基黄色发光二极管
DOI：
10.1007/s00339-014-8283-9
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发表时间：
2014-03-01
影响因子：
2.7
通讯作者：
Jiang, Fengyi
中科院分区：
文献类型：
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作者：
Zhang, Jianli;Xiong, Chuanbing;Jiang, Fengyi
采用金属有机物气相沉积法在Si衬底上生长了InGaN基多量子威尔斯（MQW）黄光发光二极管（LED）。引入蓝色多量子阱作为黄色多量子阱的应变调制层。在室温下，LED芯片在350 mA下发出72 mW的黄光，主波长为566 nm，外量子效率（EQE）为9.4%，在0.7 mA下达到22.2%的峰值EQE。没有应变调制层的比较样品表现出弱得多的性能。结果表明，InGaN系统的长波长发射是可靠的，如果多量子阱的应变已被适当调制。
InGaN-based multiple quantum wells (MQWs) yellow light-emitting diodes (LEDs) were grown on Si substrate by metal organic vapor deposition. Blue MQWs were introduced as strain modulation layers for yellow MQWs. The LED chips emitted 72-mW yellow light with 566-nm dominant wavelength and 9.4 % external quantum efficiency (EQE) at 350 mA under room temperature, and it reached a peak EQE of 22.2 % at 0.7 mA. A comparison sample without strain modulation layers exhibited much weaker performance. The results reveal that long-wavelength emission of InGaN system is reliable if the strain of MQWs has been properly modulated.