Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory
Controllable Shifts in Threshold Voltage of Top-Gate Polymer Field-Effect Transistors for Applications in Organic Nano Floating Gate Memory
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DOI：
10.1002/adfm.200901677
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发表时间：
2010-01-22
影响因子：
19
通讯作者：
Kim, Dong-Yu
中科院分区：
文献类型：
--
作者：
Baeg, Kang-Jun;Noh, Yong-Young;Kim, Dong-Yu
有机场效应晶体管（FET）存储器是一种新兴技术，有可能实现轻质、低成本、柔性的电荷存储介质。在此，报道了一种采用顶栅/底接触器件结构的溶液处理的聚[9,9 - 二辛基芴 - 2,7 - 二基] - 共 - （联噻吩）]（F8T2）纳米浮栅存储器（NFGM）。通过在聚苯乙烯和交联的聚（4 - 乙烯基苯酚）之间的界面处引入薄的金纳米粒子（NPs）作为负电荷（电子）的电荷存储位点，实现了阈值电压（V - Th）的可逆偏移和可靠的存储特性。对于具有大存储窗口（约30 V）的非晶半导体聚合物，F8T2 NFGM显示出相对较高的场效应迁移率（μ（FET））（0.02 cm² V⁻¹ s⁻¹），在相对较短的时间尺度（小于1 s）内，以80 V的栅极偏压操作电压进行写入和擦除时具有高的开/关比（大于10⁴），并且保持时间为几个小时。这种顶栅聚合物NFGM可用作有机闪存的有机晶体管存储元件。
Organic field-effect transistor (FET) memory is an emerging technology with the potential to realize light-weight, low-cost, flexible charge storage media. Here, solution-processed poly[9,9-dioctylfluorenyl-2,7-diyl]-co-(bithiophene)] (F8T2) nano floating gate memory (NFGM) with a top-gate/bottom-contact device configuration is reported. A reversible shift in the threshold voltage (V-Th) and reliable memory characterics was achieved by the incorporation of thin Au nanoparticles (NPs) as charge storage sites for negative charges (electrons) at the interface between polystyrene and cross-linked poly(4-vinylphenol). The F8T2 NFGM showed relatively high field-effect mobility (mu(FET)) (0.02 cm(2) V-1 s(-1)) for an amorphous semiconducting polymer with a large memory window (ca. 30 V), a high on/off ratio (more than 10(4)) during writing and erasing with an operation voltage of 80V of gate bias in a relatively short timescale (less than 1 s), and a retention time of a few hours. This top-gated polymer NFGM could be used as organic transistor memory element for organic flash memory.