Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature
Tuning the morphology of chevron-type graphene nanoribbons by choice of annealing temperature
复制标题
通过选择退火温度来调节 V 形石墨烯纳米带的形貌
DOI：
10.1007/s12274-018-2136-3
复制
发表时间：
2018-12-01
期刊：
影响因子：
9.9
通讯作者：
Gao, Hong-Jun
中科院分区：
文献类型：
--
作者：
Cao, Yun;Qi, Jing;Gao, Hong-Jun
通过表面辅助聚合和特别设计的前体单体的环化脱氢的石墨烯纳米带（GNR）的自下而上合成已被证明产生精确的边缘和掺杂。在这里，我们使用含硫原子的前体单体在不同的退火温度下在Au（111）表面上制备纳米结构。纳米结构具有不同的配置，从硫掺杂的聚合物到硫掺杂的人字形GNRs（CGNR），最后是具有周期性五元碳环特定边缘的原始石墨烯纳米带。非接触式原子力显微镜提供了明确的证据，在升高的退火温度下C-S键的裂解和原始CGNR的形成。第一性原理计算表明，CGNR表现出负微分电阻。
Bottom-up synthesis of graphene nanoribbons (GNRs) by surface-assisted polymerization and cyclodehydrogenation of specifically designed precursor monomers has been shown to yield precise edges and doping. Here we use a precursor monomer containing sulfur atoms to fabricate nanostructures on a Au(111) surface at different annealing temperatures. The nanostructures have distinct configurations, varying from sulfur-doped polymers to sulfur-doped chevron-type GNRs (CGNRs) and, finally, pristine graphene nanoribbons with specific edges of periodic five-member carbon rings. Non-contact atomic force microscopy provides clear evidence for the cleavage of C-S bonds and formation of pristine CGNRs at elevated annealing temperatures. First-principles calculations show that the CGNRs exhibit negative differential resistance.