Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization
Nanochemistry at the atomic scale revealed in hydrogen-induced semiconductor surface metallization
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DOI：
10.1038/nmat835
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发表时间：
2003-04-01
期刊：
影响因子：
41.2
通讯作者：
Silly, MG
中科院分区：
文献类型：
--
作者：
Derycke, V;Soukiassian, PG;Silly, MG
半导体表面的钝化可通过用单价原子(如氢原子)终止表面悬挂键来实现。这种钝化总是导致带隙中所有表面态的去除，从而导致非金属表面的终止。在这里，我们首次观察到了原子氢诱导半导体表面金属化。这一结果是通过使用光电子和光吸收光谱以及扫描隧道技术在硅端立方碳化硅(SiC)表面上实现的。这是由于表面悬挂键的氢终止和表面下氢生成的空间位阻之间的竞争造成的。了解氢稳定金属化的成分直接影响消除对微电子学至关重要的半导体界面上的电子缺陷的能力，提供了一种在高带隙化学被动材料上发展电接触的方法，特别是用于与生物系统的接口，并提供了对用于润滑的表面的控制，例如纳米机械设备。
Passivation of semiconductor surfaces against chemical attack can be achieved by terminating the surface-dangling bonds with a monovalent atom such as hydrogen. Such passivation invariably leads to the removal of all surface states in the bandgap, and thus to the termination of nonmetallic surfaces. Here we report the first observation of semiconductor surface metallization induced by atomic hydrogen. This result, established by using photo-electron and photo-absorption spectroscopies and scanning tunnelling techniques, is achieved on a Si-terminated cubic silicon carbide (SiC) surface. It results from competition between hydrogen termination of surface-dangling bonds and hydrogen-generated steric hindrance below the surface. Understanding the ingredient for hydrogen-stabilized metallization directly impacts the ability to eliminate electronic defects at semiconductor interfaces critical for microelectronics, provides a means to develop electrical contacts on high-bandgap chemically passive materials, particularly for interfacing with biological systems, and gives control of surfaces for lubrication, for example of nanomechanical devices.