Deep level transient spectroscopy of high‐energy heavy ion irradiation‐induced defects in n‐type germanium
Deep level transient spectroscopy of high‐energy heavy ion irradiation‐induced defects in n‐type germanium
复制标题
高能重离子辐照引起的n型锗缺陷的深能级瞬态光谱
DOI：
10.1063/1.354879
复制
发表时间：
1993
影响因子：
3.2
通讯作者：
P. Bogdanski
中科院分区：
文献类型：
--
作者：
P. Marie;M. Levalois;P. Bogdanski
利用深能级瞬态谱研究了室温下n型锗中的快重离子辐照诱导缺陷。辐照后观察到几个电子陷阱。相应的能量被确定为Ec−0.22、Ec−0.275、Ec−0.29、Ec−0.32和Ec−0.465 eV。详细研究了这些陷阱在室温至200 °C之间的等时退火行为。我们的结果与以前发表的比较允许识别这些缺陷与复合物，如双空位或协会的空缺与杂质。
Swift heavy ion irradiation‐induced defects have been studied in n‐type germanium at room temperature using deep level transient spectroscopy. Several electron traps have been observed after irradiation. The corresponding energies have been determined to be at Ec−0.22, Ec−0.275, Ec−0.29, Ec−0.32, and Ec−0.465 eV. The isochronal annealing behavior of these traps has been studied in detail between room temperature and 200 °C. Comparison of our results with previously published ones allowed an identification of these defects with complexes like divacancies or associations of vacancies with impurities.