A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module
A 10-mW Submillimeter-Wave Solid-State Power-Amplifier Module
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10mW 亚毫米波固态功率放大器模块
DOI：
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发表时间：
2010
影响因子：
4.3
通讯作者：
R. Lai
中科院分区：
文献类型：
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作者：
V. Radisic;W. Deal;K. Leong;X. Mei;W. Yoshida;Po;J. Uyeda;A. Fung;L. Samoska;T. Gaier;R. Lai
本文介绍了一种封装的亚毫米波固态功率放大器。SSPA是在共面波导(CPW)中实现的，并使用了先进的高Fmax InP HEMT晶体管和亚50 nm栅极。单片集成的共面波导偶极子到波导型转换消除了线键合和额外基板的需要。片上紧凑型串联耦合器用于功率合成。该放大器在340 GHz处表现出15分贝的小信号增益。在SSPA模块的波导法兰输出端，获得了峰值功率为10 mW的338 GHz饱和输出。
In this paper, we demonstrate a packaged sub-millimeter wave solid-state power amplifier (SSPA). The SSPA is implemented in coplanar waveguide (CPW) and uses an advanced high fMAX InP HEMT transistor with a sub 50-nm gate. A monolithically integrated CPW dipole-to-waveguide transition eliminates the need for wirebonding and additional substrates. On-chip compact tandem couplers are used for power combining. The amplifier demonstrates 15-dB small-signal gain at 340 GHz. Peak saturated output power of 10 mW at 338 GHz is obtained at the waveguide flange out-put for the SSPA module.