Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
Development of the magnetic tunnel junction MRAM at IBM: From first junctions to a 16-Mb MRAM demonstrator chip
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DOI：
10.1147/rd.501.0005
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发表时间：
2006-01-01
影响因子：
1.3
通讯作者：
Parkin, SSP
中科院分区：
文献类型：
--
作者：
Gallagher, WJ;Parkin, SSP
本文回顾了过去十年中磁性隧道结的显着发展，尤其是旨在证明其具有致密，快速和非挥发性随机访问记忆的潜力。最初的重点是磁性隧道结的技术根，然后是该设备的工程材料最近取得的进展。在此之后，我们讨论了磁随机存储器（MRAM）技术的开发，其中磁性隧道连接既用作存储设备和存储感应设备。重点是IBM的工作，包括该技术的基本功能的演示，并在180 nm节点技术中设计了16-MB的“产品演示器”设计，该设计的目标是MRAM技术的现实测试床。将性能和成本与竞争技术的成本进行比较。该论文还可以介绍有关MRAM设备物理学，磁性隧道连接材料和设备表征，MRAM处理和MRAM设计的更专业论文的介绍。
This paper reviews the remarkable developments of the magnetic tunnel junction over the last decade and in particular, work aimed at demonstrating its potential for a dense, fast, and nonvolatile random access memory. The initial focus is on the technological roots of the magnetic tunnel junction, and then on the recent progress made with engineered materials for this device. Following that, we discuss the development of the magnetic random access memory (MRAM) technology, in which the magnetic tunnel Junction serves as both the storage device and the storage sensing device. The emphasis is on work at IBM, including demonstrations of basic capabilities of the technology and work on a 16-Mb '' product demonstrator '' design in 180-nm node technology, which was targeted to be a realistic test bed for the MRAM technology. Performance and cost are compared with those of competing technologies. The paper also serves as an introduction to more specialized papers in this issue on MRAM device physics, magnetic tunnel junction materials and device characterization, MRAM processing, and MRAM design.