Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition
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DOI：
10.1038/ncomms4087
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发表时间：
2014-01
影响因子：
16.6
通讯作者：
Wenjuan Zhu;T. Low;Yi‐Hsien Lee;Han Wang;D. Farmer;J. Kong;F. Xia;P. Avouris
中科院分区：
文献类型：
--
作者：
Wenjuan Zhu;T. Low;Yi‐Hsien Lee;Han Wang;D. Farmer;J. Kong;F. Xia;P. Avouris
层状过渡金属二硫属化合物显示出广泛的吸引人的物理和化学性质，并且对于各种器件应用具有潜在的重要性。在这里，我们报告的电子输运和器件性能的单层二硫化钼生长的化学气相沉积。我们表明，这些设备有可能抑制短沟道效应，并有高的临界击穿电场。然而，我们的研究表明，这些设备的电子性能是目前严重限制了大量的带尾捕获状态的存在。通过电容和交流电导测量，我们系统地量化这些状态的状态密度和响应时间。由于大量的陷阱电荷，测量的有效迁移率也导致大大低估了真实的带迁移率和材料的电势。为了实现其潜在的应用，需要不断的工程努力来提高样品质量。
Layered transition metal dichalcogenides display a wide range of attractive physical and chemical properties and are potentially important for various device applications. Here we report the electronic transport and device properties of monolayer molybdenum disulphide grown by chemical vapour deposition. We show that these devices have the potential to suppress short channel effects and have high critical breakdown electric field. However, our study reveals that the electronic properties of these devices are at present severely limited by the presence of a significant amount of band tail trapping states. Through capacitance and ac conductance measurements, we systematically quantify the density-of-states and response time of these states. Because of the large amount of trapped charges, the measured effective mobility also leads to a large underestimation of the true band mobility and the potential of the material. Continual engineering efforts on improving the sample quality are needed for its potential applications.