Organic field effect transistors with dipole-polarized polymer gate dielectrics for control of threshold voltage
Organic field effect transistors with dipole-polarized polymer gate dielectrics for control of threshold voltage
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DOI：
10.1063/1.2783180
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发表时间：
2007-09
影响因子：
4
通讯作者：
H. Sakai;Yoshikazu Takahashi;H. Murata
中科院分区：
文献类型：
--
作者：
H. Sakai;Yoshikazu Takahashi;H. Murata
作者演示了具有偶极极化聚脲的有机场效应晶体管（OFFET）。在半导体层中，内部电场将半导体层中的移动的电荷载流子诱导到半导体-电介质界面。具有偶极极化栅极的MOSFET具有较低的阈值电压。在非极化栅极的情况下，阈值电压为−11.4V，而在极化栅极的情况下，阈值电压下降到−5.3V。除了阈值电压外，极化栅压还使亚阈值摆幅在栅压为− 20 V时从4.1V/decade降低到2.4V/decade。这些结果表明，偶极极化聚脲门控器允许我们以较低的功耗操作OFFERS。
The authors demonstrate organic field effect transistors (OFETs) with a dipole-polarized polyurea for the gate dielectrics. In the dielectrics, the internal electric field induces the mobile charge carrier in the semiconductor layer to the semiconductor-dielectric interface. OFETs with dipole-polarized gate dielectrics exhibit lower threshold voltage. With nonpolarized gate dielectrics, the threshold voltage was −11.4V, whereas that decreased to −5.3V with polarized gate dielectrics. In addition to the threshold voltage, polarized gate dielectrics reduced subthreshold swing from 4.1to2.4V/decade at the gate voltage of −20V. These results show that dipole-polarized polyurea gate dielectrics allow us to operate OFETs with lower power consumption.