Enhanced magnetoresistance in annealed and Cr doped Fe/Cr multilayers
Enhanced magnetoresistance in annealed and Cr doped Fe/Cr multilayers
复制标题
退火和掺铬 Fe/Cr 多层膜中增强的磁阻
DOI：
10.1063/1.362380
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发表时间：
1996
影响因子：
3.2
通讯作者：
D. Williamson
中科院分区：
文献类型：
--
作者：
N. Rensing;B. Clemens;D. Williamson
在之前的工作中，我们报道了 Fe/Cr 多层膜的磁阻可以通过在中等温度下对薄膜进行退火来增加，这会增加传导电子的自旋相关散射。在这里，我们提供的穆斯堡尔数据表明，退火的结构效应是促进 Cr 相互扩散到大部分铁层中，而不是在界面处进行短尺度混合。我们还研究了通过在 Fe/Cr 多层铁中添加铬来增加不对称散射的效果。额外的 Cr 要么以 Fe 中 1.5% 至 50% Cr 的成分与 Fe 形成合金，要么集中到嵌入 Fe 中不同位置的 1 或 2 个 A 层中。我们报告称，当 Fe 层掺杂 20% Cr 时，溅射沉积的 Fe/Cr 多层膜的室温磁阻增强高达 11.4%。对于嵌入 Cr 层的样品观察到的最大磁阻为 10.5%。相比之下，类似的未掺杂样品的磁阻为 7.5%。
In previous work we reported that the magnetoresistance of Fe/Cr multilayers can be increased by annealing the films at moderate temperatures, which increases the spin‐dependent scattering of the conduction electrons. Here we present Mossbauer data that demonstrate that the structural effect of annealing is to promote Cr interdiffusion into the bulk of the iron layers rather than short scale intermixing at the interfaces. We have also investigated the effect of increasing the asymmetric scattering by adding chromium to the iron in Fe/Cr multilayers. The additional Cr was either alloyed with the Fe in compositions ranging from 1.5% to 50% Cr in Fe, or concentrated into 1 or 2 A layers embedded at various positions in the Fe. We report enhanced room‐temperature magnetoresistance of up to 11.4% in sputter‐deposited Fe/Cr multilayers when the Fe layers are doped with 20% Cr. The maximum magnetoresistance observed for samples with embedded Cr layers was 10.5%. In comparison, the magnetoresistance was 7.5% in a similar, undoped sample.