Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies
Analysis of a Narrow-Base Lateral IGBT With Double Buried Layer for Junction-Isolated Smart-Power Technologies
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DOI：
10.1109/ted.2007.911087
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发表时间：
2008
影响因子：
3.1
通讯作者：
B. Bakeroot;J. Doutreloigne;P. Vanmeerbeek;P. Moens
中科院分区：
文献类型：
--
作者：
B. Bakeroot;J. Doutreloigne;P. Vanmeerbeek;P. Moens
研究了一种具有双埋层结构的n型横向绝缘栅双极晶体管（nLIGBT）。该器件集成在现有的智能功率结隔离技术与0.35妈妈CMOS核心，而无需添加额外的掩模步骤。有源nLIGBT下面的双埋层不仅使其成为浮置器件（即，其可用作高侧开关），而且还有效地抑制衬底电流，并且更重要的是，其引入了埋孔分流器。因此，该器件具有广泛的安全工作区域，并且关断速度极快，没有电流拖尾。通过二维数值模拟分析了该器件的静态和动态特性。最后，将该器件与该技术中的竞争漏极扩展MOSFET晶体管进行了比较。
An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35-mum CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, what is more, it introduces a buried hole diverter. As a consequence, this device has a wide safe operating area and switches off extremely fast with no current tail. The device's static and dynamic behavior is analyzed through 2-D numerical simulations. Finally, the device is compared to the rivaling drain extended MOSFET transistor in this technology.