Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage
Hybrid Flexible Resistive Random Access Memory-Gated Transistor for Novel Nonvolatile Data Storage
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DOI：
10.1002/smll.201502243
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发表时间：
2016-01-20
期刊：
影响因子：
13.3
通讯作者：
Roy, V. A. L.
中科院分区：
文献类型：
--
作者：
Han, Su-Ting;Zhou, Ye;Roy, V. A. L.
在这里，一个单一的设备演示的新型混合架构的报告，以实现可编程晶体管节点，具有类比闪存通过将电阻开关随机存取存储器（RRAM）设备作为场效应晶体管（FET）的电阻开关栅极在柔性基板上。利用溶液处理的MoS2纳米片夹在聚甲基丙烯酸甲酯聚合物层之间，制备了一种具有三层结构的高性能柔性RRAM。与基于并五苯的晶体管的栅极耦合可以由RRAM存储器状态控制，以产生具有明确定义的存储器窗口的非编程状态（非活动）和编程状态（活动）。与参考的基于MoS2浮栅的闪存器件相比，混合器件呈现出稳健的存取速度和保持能力。此外，混合RRAM门控FET被用来构建集成逻辑电路，并在反相器逻辑中实现了宽逻辑窗口。这种新型混合器件的可控、定义明确的存储器窗口、长保留时间和快速访问速度可能为实现高性能柔性电子产品的全功能非易失性存储器开辟新的可能性。
Here, a single-device demonstration of novel hybrid architecture is reported to achieve programmable transistor nodes which have analogies to flash memory by incorporating a resistive switching random access memory (RRAM) device as a resistive switch gate for field effect transistor (FET) on a flexible substrate. A high performance flexible RRAM with a three-layered structure is fabricated by utilizing solution-processed MoS2 nanosheets sandwiched between poly(methyl methacrylate) polymer layers. Gate coupling with the pentacene-based transistor can be controlled by the RRAM memory state to produce a nonprogrammed state (inactive) and a programmed state (active) with a well-defined memory window. Compared to the reference flash memory device based on the MoS2 floating gate, the hybrid device presents robust access speed and retention ability. Furthermore, the hybrid RRAM-gated FET is used to build an integrated logic circuit and a wide logic window in inverter logic is achieved. The controllable, well-defined memory window, long retention time, and fast access speed of this novel hybrid device may open up new possibilities of realizing fully functional nonvolatile memory for high-performance flexible electronics.