Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers
Voltage-Assisted Magnetization Switching in Ultrathin Fe80Co20 Alloy Layers
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DOI：
10.1143/apex.2.063001
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发表时间：
2009-06-01
影响因子：
2.3
通讯作者：
Suzuki, Yoshishige
中科院分区：
文献类型：
--
作者：
Shiota, Yoichi;Maruyama, Takuto;Suzuki, Yoshishige
随着对电压驱动自旋电子学超低功耗应用需求的不断增长，人们对铁磁金属中电压诱导磁化翻转的研究产生了新的兴趣。在本研究中，我们观察到Au（001）/Al 2 O3 Fe 80 Co 20（001）/MgO（001）/聚酰亚胺/氧化铟锡（ITO）结的垂直磁各向异性变化，并成功地实现了易磁化轴在面内和垂直方向之间的明显切换。此外，采用垂直磁化的薄膜，在磁场的帮助下，电压感应磁化翻转垂直方向上被证明。这些开创性的结果可能会打开一个新的窗口电场控制的自旋电子器件。(C)2009日本应用物理学会
Growing demands for the voltage-driven spintronic applications with ultralow-power consumption have led to new interest in exploring the voltage-induced magnetization switching in ferromagnetic metals. In this study, we observed a large perpendicular magnetic anisotropy change in Au(001)/ultrathin Fe80Co20(001)/MgO(001)/polyimide/indium tin oxide (ITO) junctions, and succeeded in realizing a clear switching of magnetic easy axis between in-plane and perpendicular directions. Furthermore, employing a perpendicularly magnetized film, voltage-induced magnetization switching in the perpendicular direction under the assistance of magnetic fields was demonstrated. These pioneering results may open a new window of electric-field controlled spintronics devices. (C) 2009 The Japan Society of Applied Physics