Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier
Photonic-crystal nano-photodetector with ultrasmall capacitance for on-chip light-to-voltage conversion without an amplifier
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DOI:
10.1364/optica.3.000483
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发表时间:
2016-05-20
期刊:
影响因子:
10.4
通讯作者:
Notomi, Masaya
中科院分区:
文献类型:
--
作者:
Nozaki, Kengo;Matsuo, Shinji;Notomi, Masaya
The power consumption of a conventional photoreceiver is dominated by that of the electric amplifier connected to the photodetector (PD). An ultralow-capacitance PD can overcome this limitation, because it can generate sufficiently large voltage without an amplifier when combined with a high-impedance load. In this work, we demonstrate an ultracompact InGaAs PD based on a photonic crystal waveguide with a length of only 1.7 mu m and a capacitance of less than 1 fF. Despite the small size of the device, a high responsivity of 1 A/W and a clear 40 Gbit/s eye diagram are observed, overcoming the conventional trade-off between size and responsivity. A resistor-loaded PD was actually fabricated for light-to-voltage conversion, and a kilo-volt/watt efficiency with a gigahertz bandwidth even without amplifiers was measured with an electro-optic probe. Combined experimental and theoretical results reveal that a bandwidth in excess of 10 GHz can be expected, leading to an ultralow energy consumption of less than 1 fJ/bit for the photoreceiver. Amplifier-less PDs with attractive performance levels are therefore feasible and a step toward a densely integrated photonic network/processor on a chip. (C) 2016 Optical Society of America