Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector
Highly Enhanced SWIR Image Sensors Based on Ge1-xSnx-Graphene Heterostructure Photodetector
复制标题
基于Ge1-xSnx-石墨烯异质结构光电探测器的高度增强型短波红外图像传感器
DOI:
10.1021/acsphotonics.8b01731
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发表时间:
2019
期刊:
影响因子:
7
通讯作者:
Wang Qiming
中科院分区:
文献类型:
--
作者:
Yang Fan;Yu Kai;Cong Hui;Xue Chunlai;Cheng Buwen;Wang Nan;Zhou Lin;Liu Zhi;Wang Qiming
Ge1–xSnxwith a tunable bandgap that covers full shortwave infrared (SWIR) from 1 to 2.6 μm presents a new paradigm for silicon-based SWIR photodetection. However, low absorption and high surface recombination remain to be large limitations for realization of high performance photodetector. This work demonstrates GeSn–graphene heterostructure photodetectors with high responsivity, photoconductive gain, and detectivity can effectively lessen the burdens. Compared with the pure GeSn photodetector, the introduction of graphene not only effectively solves the problem of serious surface states of the GeSn active layer, but achieves large enhancements in both photocurrent and response speed, even under a relatively weak illumination, which indicates photogenerated carriers can be separated and transported in higher efficiency. At the same time, there is no recession in performance after a 4 month exposure in ambient environment. In addition, the heterostructure is integrated into a 20 × 20 pixel detector array with a size of 440 × 440 μm2and an image of letter “E” is clearly obtained according to a mask measurement method. The compatibility with CMOS technique offers such photodetector new opportunities for application in SWIR optical communication and imaging, remote sensing, and biomedical.