Defect reduction with special routing for immersion lithography
Defect reduction with special routing for immersion lithography
复制标题
DOI：
10.1117/1.2718941
复制
发表时间：
2007
影响因子：
2
通讯作者：
Fu-Jye Liang;Lin-Hung Shiu;Chun-Kuang Chen;Li-Jui Chen;T. Gau;B. Lin
中科院分区：
文献类型：
--
作者：
Fu-Jye Liang;Lin-Hung Shiu;Chun-Kuang Chen;Li-Jui Chen;T. Gau;B. Lin
这封信报道了破纪录的低缺陷数浸没光刻，形成的机制，灰颗粒印刷缺陷，并为两个新的曝光路线，以实现低缺陷数。这两种新的布线使槽扫描方向平行于场步进方向，而在正常布线中，这两个方向彼此垂直。从实验数据来看，一种特殊布线的平均缺陷数为每片4.8个，而普通布线的平均缺陷数为每片19.7个。© 2007年摄影光学仪器工程师协会。
This letter reports record-breaking low defect counts for immersion lithography, the mechanism for forma- tion of particle-printing defects, and for two new exposure routings to achieve the low defect counts. Both new routings make the slot-scan directions parallel to the field-stepping directions, whereas in the normal routing the two directions are perpendicular to each other. From experimental data, the average defect count for one of the special routings is 4.8 per wafer, while it is 19.7 per wafer for normal routing. © 2007 Society of Photo-Optical Instrumentation Engineers.