Origin of the efficient light emission from inversion domain boundaries in GaN
Origin of the efficient light emission from inversion domain boundaries in GaN
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DOI：
10.1063/1.1554776
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发表时间：
2002-10
影响因子：
4
通讯作者：
V. Fiorentini
中科院分区：
文献类型：
--
作者：
V. Fiorentini
据报道，在GaN中故意产生的反转磁区边界是高效的浅复合中心。这封信报道了基于从头算密度泛函计算的这种现象的基本原理。基于GaN中极化的存在，提出了一个模型，即在两个相反的表面之间施加电压的情况下，磁区边界起到整流结的作用。
Intentionally produced inversion domain boundaries in GaN have been reported to be highly efficient shallow recombination centers. This letter report a rationale for this phenomenon based on ab initio density-functional calculations. A model is also proposed, based on the existence of polarization in GaN, of the observation that a domain boundary acts as a rectifying junction under voltage applied between the two opposite-polarity surfaces.